Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2017 / 01 Vol. 35; Iss. 1
Effects of annealing on top-gated MoS 2 transistors with HfO 2 dielectric
Zhao, Peng, Azcatl, Angelica, Bolshakov, Pavel, Moon, Jiyoung, Hinkle, Christopher L., Hurley, Paul K., Wallace, Robert M., Young, Chadwin D.Volume:
35
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4974220
Date:
January, 2017
File:
PDF, 1.44 MB
english, 2017