On the Importance of the Polarity for GaN/InGaN Last...

IEEE Photonics Journal 2016 / 12 Vol. 8; Iss. 6

On the Importance of the Polarity for GaN/InGaN Last Quantum Barriers in III-Nitride-Based Light-Emitting Diodes

Zhang, Zi-Hui, Zhang, Yonghui, Li, Hongjian, Xu, Shu, Geng, Chong, Bi, Wengang
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Volume:
8
Language:
english
Journal:
IEEE Photonics Journal
DOI:
10.1109/jphot.2016.2628205
Date:
December, 2016
File:
PDF, 657 KB
english, 2016
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