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Low temperature, solution-processed ambipolar field-effect transistors based on polymer/self-assembled monolayer modified InOx hybrid structures for balanced hole and electron mobilities exceeding 1 cm2 V−1 s−1
Sun, Sheng, Li, Yuzhi, Lan, Linfeng, Xiao, Peng, Chen, Zhenhui, Lin, Zhenguo, Chen, Junwu, Peng, Junbiao, Cao, YongVolume:
43
Language:
english
Journal:
Organic Electronics
DOI:
10.1016/j.orgel.2017.01.029
Date:
April, 2017
File:
PDF, 1.63 MB
english, 2017