Step JTE, an Edge Termination for UHV SiC Power Devices...

IEEE Transactions on Electron Devices 2017 / 3 Vol. 64; Iss. 3

Step JTE, an Edge Termination for UHV SiC Power Devices With Increased Tolerances to JTE Dose and Surface Charges

Zhou, Cai-Neng, Wang, Yan, Yue, Rui-Feng, Dai, Gang, Li, Jun-Tao
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Volume:
64
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2017.2648886
Date:
March, 2017
File:
PDF, 1.85 MB
english, 2017
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