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Strain and deformations engineered germanene bilayer double gate-field effect transistor by first principles
Meher Abhinav, E., Chandrasekaran, Gopalakrishnan, Kasmir Raja, S.V.Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2017.01.261
Date:
January, 2017
File:
PDF, 1.11 MB
english, 2017