TiSiOx gate dielectrics produced by reactive sputtering for...

Materials Science in Semiconductor Processing 2017 / 04 Vol. 61

TiSiOx gate dielectrics produced by reactive sputtering for high performance InGaZnO thin film transistors

Fu, Yi-Zhou, Li, Jun, Zhao, Cheng-Yu, Huang, Chuan-Xin, Zhang, Jian-Hua, Li, Xi-Feng, Jiang, Xue-Yin, Zhang, Zhi-Lin
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Volume:
61
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2017.01.004
Date:
April, 2017
File:
PDF, 1.01 MB
english, 2017
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