High performance top-gated ferroelectric field effect...

Applied Physics Letters 2017 / 01 Vol. 110; Iss. 4

High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets

Tian, Hongzheng, Wang, Xudong, Zhu, Yuankun, Liao, Lei, Wang, Xianying, Wang, Jianlu, Hu, Weida
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Volume:
110
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4975061
Date:
January, 2017
File:
PDF, 1.26 MB
english, 2017
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