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Improved reverse recovery characteristics of low turn-on voltage AlGaN/GaN Schottky barrier diodes with anode edge AlON spacers
Hsueh, Kuang-Po, Peng, Li-Yi, Cheng, Yuan-Hsiang, Wang, Hou-Yu, Wang, Hsiang-Chun, Kao, Hsuan-Ling, Chiu, Hsien-ChinVolume:
703
Language:
english
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2017.01.325
Date:
May, 2017
File:
PDF, 1.70 MB
english, 2017