Improvement of negative-bias-illumination-stress stability...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2015 / 03 Vol. 33; Iss. 2

Improvement of negative-bias-illumination-stress stability in all-transparent double-gate InGaZnO thin-film transistors

Jeon, Da-Bin, Ryu, Min-Ki, Byun, Chun-Won, Yang, Jong-Heon, Hwang, Chi-Sun, Yoon, Sung-Min
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Volume:
33
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4906570
Date:
March, 2015
File:
PDF, 1.24 MB
english, 2015
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