Recrystallization of Ge thin film on SiO2substrates using a...

Electronic Materials Letters 2017 / 1 Vol. 13; Iss. 1

Recrystallization of Ge thin film on SiO2substrates using a two-step annealing process

Kim, Sung Wook, Lee, Jaejun, Park, Youn Ho, Park, Jeong Min, Do, Hong Kyeong, Kim, Yeon Joo, Choi, Heon-Jin
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
13
Language:
english
Journal:
Electronic Materials Letters
DOI:
10.1007/s13391-017-6198-2
Date:
January, 2017
File:
PDF, 1.21 MB
english, 2017
Conversion to is in progress
Conversion to is failed