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Atomically precise semiconductor—graphene and hBN interfaces by Ge intercalation
Verbitskiy, N. I., Fedorov, A. V., Profeta, G., Stroppa, A., Petaccia, L., Senkovskiy, B., Nefedov, A., Wöll, C., Usachov, D. Yu., Vyalikh, D. V., Yashina, L. V., Eliseev, A. A., Pichler, T., Grüneis,Volume:
5
Language:
english
Journal:
Scientific Reports
DOI:
10.1038/srep17700
Date:
November, 2016
File:
PDF, 1.50 MB
english, 2016