[IEEE 2016 IEEE International Electron Devices Meeting...

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[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz

Romanczyk, B., Guidry, M., Wienecke, S., Li, H., Ahmadi, E., Zheng, X., Keller, S., Mishra, U. K.
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Year:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838339
File:
PDF, 1006 KB
english, 2016
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