[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - True random number generator using current difference based on a fractional stochastic model in 40-nm embedded ReRAM
Wei, Z., Katoh, Y., Ogasahara, S., Yoshimoto, Y., Kawai, K., Ikeda, Y., Eriguchi, K., Ohmori, K., Yoneda, S.Year:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838349
File:
PDF, 2.57 MB
english, 2016