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[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Multi-domain compact modeling for GeSbTe-based memory and selector devices and simulation for large-scale 3-D cross-point memory arrays
Xu, Nuo, Wang, Jing, Deng, Yexin, Lu, Yang, Fu, Bo, Choi, Woosung, Monga, Udit, Jeon, Jongwook, Kim, Jongchol, Lee, Keun-Ho, Jung, Eun SeungYear:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838371
File:
PDF, 1.18 MB
english, 2016