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[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Backside illuminated SPAD image sensor with 7.83μm pitch in 3D-stacked CMOS technology
Abbas, T. Al, Dutton, N. A. W., Almer, O., Pellegrini, S., Henrion, Y., Henderson, R. K.Year:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838372
File:
PDF, 617 KB
english, 2016