[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - 1.7 kV/1.0 mΩcm 2 normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure
Shibata, Daisuke, Kajitani, Ryo, Ogawa, Masahiro, Tanaka, Kenichiro, Tamura, Satoshi, Hatsuda, Tsuguyasu, Ishida, Masahiro, Ueda, TetsuzoYear:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838385
File:
PDF, 560 KB
english, 2016