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[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - High-speed switching and current-collapse-free operation by GaN gate injection transistors with thick GaN buffer on bulk GaN substrates
Handa, Hiroyuki, Ujita, Shinji, Shibata, Daisuke, Kajitani, Ryo, Shiozaki, Nanako, Ogawa, Masahiro, Umeda, Hidekazu, Tanaka, Kenichiro, Tamura, Satoshi, Hatsuda, Tsuguyasu, Ishida, Masahiro, Ueda, TetYear:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838387
File:
PDF, 402 KB
english, 2016