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[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime
Hua, Mengyuan, Zhang, Zhaofu, Wei, Jin, Lei, Jiacheng, Tang, Gaofei, Fu, Kai, Cai, Yong, Zhang, Baoshun, Chen, Kevin J.Year:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838388
File:
PDF, 1.20 MB
english, 2016