High Performance Tri-Gate GaN Power MOSHEMTs on Silicon...

IEEE Electron Device Letters 2017 / 3 Vol. 38; Iss. 3

High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate

Ma, Jun, Matioli, Elison
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Volume:
38
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2017.2661755
Date:
March, 2017
File:
PDF, 1.69 MB
english, 2017
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