A Kinetic Model of Silicon Carbide Oxidation Based on the...

Applied Physics Express 2009 / 2 Vol. 2

A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon

Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi
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Volume:
2
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.2.021203
Date:
February, 2009
File:
PDF, 141 KB
english, 2009
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