New concept of planar germanium MOSFET with stacked...

Japanese Journal of Applied Physics 2015 / 04 Vol. 54; Iss. 4S

New concept of planar germanium MOSFET with stacked germanide layers at source/drain

Xu, Hao, Sun, Lei, Zhang, Yi-Bo, Han, Jing-Wen, Wang, Yi, Zhang, Sheng-Dong
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Volume:
54
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.54.04DC13
Date:
April, 2015
File:
PDF, 1.13 MB
english, 2015
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