A 1.9-GHz silicon-on-insulator CMOS stacked-FET power...

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International Journal of Circuit Theory and Applications 2017

A 1.9-GHz silicon-on-insulator CMOS stacked-FET power amplifier with uniformly distributed voltage stresses

Im, Donggu, Kwon, Kuduck, Lee, In-Young
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Year:
2017
Language:
english
Journal:
International Journal of Circuit Theory and Applications
DOI:
10.1002/cta.2325
File:
PDF, 637 KB
english, 2017
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