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[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs
Rescher, Gerald, Pobegen, Gregor, Aichinger, Thomas, Grasser, TiborYear:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838392
File:
PDF, 5.40 MB
english, 2016