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[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Fully coupled 3-D device simulation of negative capacitance FinFETs for sub 10 nm integration

Ota, Hiroyuki, Ikegami, Tsutomu, Hattori, Junichi, Fukuda, Koichi, Migita, Shinji, Toriumi, Akira
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Year:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838403
File:
PDF, 536 KB
english, 2016
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