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[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs
Franco, J., Kaczer, B., Mukhopadhyay, S., Duhan, P., Weckx, P., Roussel, Ph. J., Chiarella, T., Ragnarsson, L.-A, Trojman, L., Horiguchi, N., Spessot, A., Linten, D., Mocuta, A.Year:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838422
File:
PDF, 936 KB
english, 2016