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[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Hot carrier effect in ultra-scaled replacement metal gate Sii-xGex channel p-FinFETs
Wang, Miaomiao, Miao, Xin, Stathis, James H, Southwick, Richard, Linder, Barry P., Liu, Derrick, Bao, Ruqiang, Watanabe, KojiYear:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838423
File:
PDF, 718 KB
english, 2016