[IEEE 2016 IEEE International Electron Devices Meeting...

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[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Hyperdimensional computing with 3D VRRAM in-memory kernels: Device-architecture co-design for energy-efficient, error-resilient language recognition

Li, Haitong, Wu, Tony F., Rahimi, Abbas, Li, Kai-Shin, Rusch, Miles, Lin, Chang-Hsien, Hsu, Juo-Luen, Sabry, Mohamed M., Eryilmaz, S. Burc, Sohn, Joon, Chiu, Wen-Cheng, Chen, Min-Cheng, Wu, Tsung-Ta,
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Year:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838428
File:
PDF, 2.00 MB
english, 2016
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