[IEEE 2016 IEEE International Electron Devices Meeting...

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[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Zero static-power 4T SRAM with self-inhibit resistive switching load by pure CMOS logic process

Liao, Chu-Feng, Hsu, Meng-Yin, Chih, Yue-Der, Chang, Jonathan, King, Ya-Chin, Lin, Chrong Jung
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Year:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838432
File:
PDF, 908 KB
english, 2016
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