![](/img/cover-not-exists.png)
[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin
Zhang, Qingzhu, Yin, Huaxiang, Luo, Jun, Yang, Hong, Meng, Lingkuan, Li, Yudong, Wu, Zhenhua, Zhang, Yanbo, Zhang, Yongkui, Qin, Changliang, Li, Junjie, Gao, Jianfeng, Wang, Guilei, Xiong, Wenjuan, XiYear:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838438
File:
PDF, 1.36 MB
english, 2016