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[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Improvement of the CMOS characteristics of bulk Si FinFETs by high temperature ion implantation
Kikuchi, Y., Hopf, T., Mannaert, G., Tao, Z., Waite, A., Cournoyer, J., Borniquel, J., Schreutelkamp, R., Ritzenthaler, R., Kim, M. S., Kubicek, S., Chew, S. A., Devriendt, K., Schram, T., Demuynck, SYear:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838440
File:
PDF, 696 KB
english, 2016