[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - A novel dual isolation scheme for stress and back-bias maximum efficiency in FDSOI Technology
Berthelon, R., Andrieu, F., Perreau, P., Cooper, D., Roze, F., Gourhant, O., Rivallin, P., Bernier, N., Cros, A., Ndiaye, C., Baylac, E., Souchier, E., Dutartre, D., Claverie, A., Weber, O., Josse, E.Year:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838442
File:
PDF, 676 KB
english, 2016