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[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates
Mertens, H., Ritzenthaler, R., Chasin, A., Schram, T., Kunnen, E., Hikavyy, A., Ragnarsson, L.-A., Dekkers, H., Hopf, T., Wostyn, K., Devriendt, K., Chew, S. A., Kim, M. S., Kikuchi, Y., Rosseel, E.,Year:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838456
File:
PDF, 759 KB
english, 2016