[IEEE 2016 IEEE International Electron Devices Meeting...

  • Main
  • [IEEE 2016 IEEE International Electron...

[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

Mertens, H., Ritzenthaler, R., Chasin, A., Schram, T., Kunnen, E., Hikavyy, A., Ragnarsson, L.-A., Dekkers, H., Hopf, T., Wostyn, K., Devriendt, K., Chew, S. A., Kim, M. S., Kikuchi, Y., Rosseel, E.,
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838456
File:
PDF, 759 KB
english, 2016
Conversion to is in progress
Conversion to is failed