[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Reliability study of a 128Mb phase change memory chip implemented with doped Ga-Sb-Ge with extraordinary thermal stability
Chien, W. C., Cheng, H. Y., BrightSky, M., Ray, A., Yeh, C. W., Kim, W., Bruce, R., Zhu, Y., Ho, H. Y., Lung, H. L., Lam, C.Year:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838463
File:
PDF, 834 KB
english, 2016