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[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Microsecond transient thermal behavior of HfOx-based resistive random access memory using a micro thermal stage (MTS)
Jiang, Zizhen, Wang, Ziwen, Zheng, Xin, Fong, Scott, Qin, Shengjun, Chen, Hong-Yu, Ahn, Chiyui, Cao, Ji, Nishi, Yoshio, Wong, H.-S. PhilipYear:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838465
File:
PDF, 1.62 MB
english, 2016