[IEEE 2016 IEEE International Electron Devices Meeting...

  • Main
  • [IEEE 2016 IEEE International Electron...

[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Monolithic integration of AgTe/TiO2 based threshold switching device with TiN liner for steep slope field-effect transistors

Song, Jeonghwan, Park, Jaehyuk, Moon, Kibong, Woo, Jiyong, Lim, Seokjae, Yoo, Jongmyung, Lee, Dongwook, Hwang, Hyunsang
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838478
File:
PDF, 707 KB
english, 2016
Conversion to is in progress
Conversion to is failed