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[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB
Jiao, Guangfan, Toledano-Luque, Maria, Nam, Kab-Jin, Toshiro, Nakanishi, Lee, Seung-Hun, Kim, Jin-Soak, Kauerauf, Thomas, Chung, EunAe, Bae, Dong-il, Bae, Geumjong, Kim, Dong-Won, Hwang, KihyunYear:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838518
File:
PDF, 509 KB
english, 2016