![](/img/cover-not-exists.png)
[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Record high mobility (428cm 2 /V-s) of CVD-grown Ge/strained Ge0.91Sn0.09/Ge quantum well p-MOSFETs
Huang, Yu-Shiang, Huang, Chih-Hsiung, Lu, Fang-Liang, Lin, Chung-Yi, Ye, Hung-Yu, Wong, I-Hsieh, Jan, Sun-Rong, Lan, Huang-Siang, Liu, C. W., Huang, Yi-Chiau, Chung, Hua, Chang, Chorng-Ping, Chu, SchuYear:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838531
File:
PDF, 640 KB
english, 2016