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[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Low-voltage artificial neuron using feedback engineered insulator-to-metal-transition devices
Lin, J., Annadi,, Sonde, S., Chen, C., Stan, L., Achari, K.V.L.V, Ramanathan, S., Guha, S.Year:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838541
File:
PDF, 561 KB
english, 2016