Interface Defect Hydrogen Depassivation and...

ACS Applied Materials & Interfaces 2017 / 03 Vol. 9; Iss. 8

Interface Defect Hydrogen Depassivation and Capacitance–Voltage Hysteresis of Al 2 O 3 /InGaAs Gate Stacks

Tang, Kechao, Palumbo, Felix Roberto, Zhang, Liangliang, Droopad, Ravi, McIntyre, Paul C.
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Volume:
9
Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/acsami.6b16232
Date:
March, 2017
File:
PDF, 5.47 MB
english, 2017
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