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Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template
Yasuda, Toshiki, Takeuchi, Tetsuya, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu, Amano, HiroshiVolume:
10
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.10.025502
Date:
February, 2017
File:
PDF, 1011 KB
english, 2017