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[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Excellent threshold switching device (Ioff ∼ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (Vdd = 0.25 V) FET applications
Lim, Seokjae, Yoo, Jongmyung, Song, Jeonghwan, Woo, Jiyong, Park, Jaehyuk, Hwang, HyunsangYear:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838543
File:
PDF, 692 KB
english, 2016