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[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - ESD diodes in a bulk Si gate-all-around vertically stacked horizontal nanowire technology
Chen, S.-H., Hellings, G., Scholz, M., Linten, D., Mertens, H., Ritzenthaler, R., Boschke, R., Groeseneken, G., Horiguchi, N.Year:
2016
Language:
english
DOI:
10.1109/IEDM.2016.7838548
File:
PDF, 867 KB
english, 2016