MBE growth of high electron mobility 2DEGs in AlGaN/GaN...

AIP Advances 2012 / 03 Vol. 2; Iss. 1

MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED

Broxtermann, D., Sivis, M., Malindretos, J., Rizzi, A.
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Volume:
2
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.3679149
Date:
March, 2012
File:
PDF, 627 KB
english, 2012
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