Impact of Silicon Nitride Stoichiometry on the...

IEEE Transactions on Electron Devices 2017 / 3 Vol. 64; Iss. 3

Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

Waller, William M., Gajda, Mark, Pandey, Saurabh, Donkers, Johan J. T. M., Calton, David, Croon, Jeroen, Karboyan, Serge, Sonsky, Jan, Uren, Michael J., Kuball, Martin
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Volume:
64
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2017.2654800
Date:
March, 2017
File:
PDF, 1.31 MB
english, 2017
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