On the interplay between relaxation, defect formation, and atomic Sn distribution in Ge (1−x) Sn (x) unraveled with atom probe tomography
Kumar, A., Demeulemeester, J., Bogdanowicz, J., Bran, J., Melkonyan, D., Fleischmann, C., Gencarelli, F., Shimura, Y., Wang, W., Loo, R., Vandervorst, W.Volume:
118
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4926473
Date:
July, 2015
File:
PDF, 1.38 MB
english, 2015