MBE-grown 232–270 nm deep-UV LEDs using monolayer thin...

Applied Physics Letters 2017 / 01 Vol. 110; Iss. 4

MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures

Islam, S. M., Lee, Kevin, Verma, Jai, Protasenko, Vladimir, Rouvimov, Sergei, Bharadwaj, Shyam, (Grace) Xing, Huili, Jena, Debdeep
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Volume:
110
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4975068
Date:
January, 2017
File:
PDF, 1.65 MB
english, 2017
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