Admittance spectroscopy of Ge/Si p-i-n structures with Ge...

Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots

Pishchagin, A A, Voitsekhovskii, A V, Kokhanenko, A P, Serokhvostov, V Yu, Dzyadukh, S M, Nikiforov, A I
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Volume:
741
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/741/1/012015
Date:
August, 2016
File:
PDF, 936 KB
english, 2016
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