Effect of hydrogen passivation on the photoluminescence of...

Journal of Applied Physics 2015 / 12 Vol. 118; Iss. 24

Effect of hydrogen passivation on the photoluminescence of Tb ions in silicon rich silicon oxide films

Zatryb, G., Klak, M. M., Wojcik, J., Misiewicz, J., Mascher, P., Podhorodecki, A.
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Volume:
118
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4939199
Date:
December, 2015
File:
PDF, 939 KB
english, 2015
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