Experimental and simulation study of 1D silicon nanowire...

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IEEE Transactions on Nanotechnology 2017

Experimental and simulation study of 1D silicon nanowire transistors using heavily doped channels

Georgiev, Vihar P., Mirza, Muhammad, Dochioiu, Alexandru-Iustin, Adamu-Lema, Fikru, Amoroso, Salvatore M., Towie, Ewan, Riddet, Craig, MacLaren, Donald A., Asenov, Asen, Paul, Douglas J.
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Year:
2017
Language:
english
Journal:
IEEE Transactions on Nanotechnology
DOI:
10.1109/TNANO.2017.2665691
File:
PDF, 4.86 MB
english, 2017
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