Stable p-i-n FAPbBr 3 Devices...

Stable p-i-n FAPbBr 3 Devices with Improved Efficiency Using Sputtered ZnO as Electron Transport Layer

Subbiah, Anand S., Agarwal, Sumanshu, Mahuli, Neha, Nair, Pradeep, van Hest, Maikel, Sarkar, Shaibal K.
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Volume:
4
Language:
english
Journal:
Advanced Materials Interfaces
DOI:
10.1002/admi.201601143
Date:
April, 2017
File:
PDF, 1.36 MB
english, 2017
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